PART |
Description |
Maker |
LC321667BJ-80 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Sanyo Electric Co., Ltd.
|
V53C16258HK60 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Murata Manufacturing Co., Ltd.
|
V53C511816502K-60I V53C511816502ST-60 V53C51181650 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Ecliptek, Corp.
|
GM71V16163BT-6 GM71V16163BJ-8 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
AMIC Technology, Corp.
|
HY5116164BSLTC-60 HY5116164BJC-60 HY5116164BSLJC-8 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Omron Electronics, LLC Infineon Technologies AG
|
UPD424210G5-60-7JF UPD424210G5-60-7JF-G UPD424210L |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
FIBOX
|
UPD4216160LLE-A80 UPD4217400LG3-A80 UPD42S16400LG3 |
x16 Fast Page Mode DRAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
EPCOS AG
|
GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28 2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
HY5118164CSLTC-80 HY5118164CTC-70 HY5118164CSLJC-7 |
x16 EDO Page Mode DRAM
|
|
MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM 6400(x16)的快闪记忆体和4M(x16)的静态RAM
|
Spansion, Inc.
|
IC41C1665 IS41LV1665 IS41LV1665-40K IC41LV1665 IC4 |
RES 100 OHM 5% 1/3W R1210 64K x16 bit Dynamic RAM with Fast Page Mode 64K的x16位动态随机存储器和快速页面模
|
Integrated Circuit Solu... ICSI[Integrated Circuit Solution Inc] TE Connectivity, Ltd.
|